| 摘要 |
<p>Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of the semi-insulating blocking layer and a conductive substrate. Non-linearity of optical power output versus bias current is addressed by a heat dissipation scheme using the semi-insulative and conductive layers of the device.</p> |
