| 摘要 |
<p>A backing pad be used in a holding jig for holding a semiconductor wafer in the step of mirror polishing comprises a hydrophobic foam, possessed rigidity such that the defference between the thickness, T1, thereof under a load of 300 gf/cm<2> and the thickness, T2, thereof under a load of 1,800 gf/cm<2> (T1 - T2) is in the range of from 1 to 100 mu m, and has holes formed therein in a diameter in the range of 10 to 30 mu m through the wafer-holding surface thereof. The polishing of a semiconductor is effected by a method which comprises preparing a finished backing pad by the precision surface machining operation, setting the semiconductor wafer on a wafer holding jig having a template containing at least one wafer-positioning hole fixed on a carrier plate in such a manner that the backing pad enters the positioning hole , and polishing the semiconductor wafer. <IMAGE></p> |
