| 摘要 |
PURPOSE:To form a capacity element of large capacity on a gate electrode of a driver transistor by composing the gate electrode of the driver electrode out of a different material from that of a gate electrode of a transfer gate transistor. CONSTITUTION:In an E/R memory cell comprising driver transistors Q1 and Q2, transfer gate transistor Q3 and Q4, and addional capacities C1 and C2, gate electrodes of driver transistors Q1 and Q2 are composed of a different material from that of gate electrodes of transistors Q3 and Q4. Namely, the gate electrodes of the transistors Q3 and Q4 are formed of high-melting-point metal polycide and the gate electrodes of the transistors Q1 and Q2 are formed of a different material, polysilicon film. By such constitution, the capacity of the additonal capacities elements which are needed to be formed on the gate electrodes of the transistors Q1 and Q2 can be enhanced. |
