Prevention of agglomeration and inversion in a semiconductor polycide process

摘要

Conductors are fabricated by forming a layer of doped polysilicon (15) on a semiconductor substrate (5) having a gate oxide film (10) formed therein, forming a nitrogen-enriched conductive layer (20) on the layer of doped polysilicon. The structure is then conventionally capped with a dielectric film (22). Next, the nitrogen-enriched conductive layer and layer of doped polysilicon are patterned using a photoresist mask so as to form the conductors. The nitrogen contained in the nitrogen-enriched conductive layer provides for improved thermal stability thereof. <MATH>