发明名称 Semiconductor integrated circuit device and electronic apparatus in use thereof
摘要 <p>The object of the present invention is to improve a voltage boosting circuit wherein a plurality of MOSFETs in a diode connection are connected in series and an input signal is inputted to a node of the MOSFET via a capacitor and to provide a semiconductor integrated circuit device for an electronic apparatus having the voltage boosting circuit with high efficiency and low cost by means of changing threshold values VtMo through VtMn of the MOSFETs M0 through Mn and capacitances Cc1 through Ccn of capacitance elements C1 through Cn of the voltage boosting circuit, or forming a structure to which a signal voltage boosting circuit for boosting wave height values of clock signals PHI and PHI * that are inputted signals for inputting to the signal boosting. &lt;MATH&gt;</p>
申请公布号 EP0694971(A2) 申请公布日期 1996.01.31
申请号 EP19950305192 申请日期 1995.07.25
申请人 SEIKO INSTRUMENTS INC. 发明人 UTSUNOMIYA, FUMIYASU;SAITOH, YUTAKA;SAITOH, NAOTO;OSANAI, JUN;KONISHI, HARUO;MIYAGI, MASANORI
分类号 H01L21/8247;H01L21/822;H01L21/8234;H01L27/02;H01L27/04;H01L27/06;H01L27/088;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):H01L27/06;H01L27/07 主分类号 H01L21/8247
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