| 摘要 |
PURPOSE:To manufacture a Schottky-gate type field-effect transistor, which has excellent microwave characteristics and the degree of integration and reliability of which can be improved, by forming a second operating layer having impurity concentration approximately the same as a first operating layer shaped in a self-alignment manner to a gate electrode and thickness thicker than a first region and a third operating layer having concentration higher than the first region formed in the self-alignment manner to a side wall further shaped to the side wall of a gate. CONSTITUTION:Since a second operating layer 7 and a third operating layer 9 are formed in self-alignment manner to a first side wall 6 and a second side wall 8 shaped to the side wall of a gate electrode and ohmic electrodes 3, 4 are formed to the self-alignment manner to the second side wall 8, dispersion on manufacture due to errors on positioning is reduced and the improvement of yield is realized while distances between a source and a gate and between the gate and a drain are shortened, and the enhancement of performance by the lowering of source resistance is realized. |
