Semiconductor device and package structure therefor and power inverter having semiconductor device

摘要

An auxiliary cathode lead (24) is contacted to a cathode buffer electrode (32) which contacts to an unit GTO arranged at the most remote region from a gate pressure contacting portion (33) of a GTO pellet (10) and the push-into effect of the auxiliary cathode current during the turn-off can be remarkably performed. Without inviting bad affects such as the increase in "on" voltage, it is proposed a package structure of a semiconductor which the unit GTO arranged remote from a gate is easily to perform the turn-off. The maximum turn-off current can be heightened, it can easily correspond to the increase in the diameter of the pellet according to the large current of the unit element. Further, a condenser of a snubber circuit as a protection circuit of the unit GTO in a power inverter can be small, and the snubber loss can be lessened. $$