| 摘要 |
<p>The semiconductor photosensitive element comprises a first and a second photosensitive region (resp. (10, 11) and (21)), the first photosensitive region being different from the second photosensitive region in its structure so that the first photosensitive region has photoelectric conversion characteristic and frequency characteristic which are different from those of the second photosensitive region. A method for forming a semiconductor photosensitive element comprises steps of forming a high concentration impurity region of a first conductivity type and an element isolation region (30) on a semiconductor of the first conductivity type, forming a semiconductor layer of a second conductivity type on the semiconductor substrate and high concentration impurity region, thereby to form a first photosensitive region formed of the high concentration impurity region (10) formed on the semiconductor substrate and the photoelectric conversion layer consisting of the semiconductor layer and a second photosensitive region formed of the photoelectric conversion layer consisting of the semiconductor layer formed on the semiconductor substrate (1). <MATH></p> |
