| 摘要 |
PURPOSE:To simply and inexpensively form a P-N junction of high quality by heat treating a P-type or N-type CdTe water in a reaction tube in a Cd or Te atmosphere. CONSTITUTION:A P-type or N-type CdTe wafer is heat treated in a Cd or Te atmosphere. A boat 3 for placing the wafer 2 is placed partly in a reaction tube 1, such as a quartz tube, and a boat 4 which contains Cd or Te is placed at a separate position. The tube is so constructed as to feed inert gas stream, such as hydrogen or argon. As an example of operation, the wafer is heated to 500-900 deg.C in the stream of hydrogen gas of atmospheric pressure, and the Ce and Te are heated to 400-800 deg.C. The Cd is used for the P-type wafer, and the Te is used for the N-type wafer. The thickness of the N-type or P-type layer formed on the wafer can be freely adjusted by altering the conditions of the temperature of the wafer and/or the heat treatment. |
