| 摘要 |
The semiconductor memory device includes word lines, bit line pairs crossing the word lines, memory cells disposed, a row decoder, and sense amplifiers. The device further includes a plurality of comparing circuits, a plurality of control circuits, and a determination signal generating circuit. Each comparing circuit compares a data signal read out from the corresponding memory cell with a reference signal externally applied when the reference signal is at an H level, and generates a result signal indicating whether or not the data signal matches the reference signal. Each control circuit carries out control so that a result signal from the comparing circuit indicates a match irrespectively of whether or not the data signal matching the reference signal when the reference signal is at an L level. The determination signal generating circuit generates a determination signal indicating a match when all of the results signals from the comparing circuits indicate a match, and generates a determination signal indicating a mismatch when any of the result signals from the comparing circuits indicates a mismatch.
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