A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.
申请公布号
US5487354(A)
申请公布日期
1996.01.30
申请号
US19940349397
申请日期
1994.12.05
申请人
WACKER-CHEMITRONIC GESELLSCHAFT FUER ELETRONIK-GRUNDSTOFFE MBH
发明人
VON AMMON, WILFRIED;DORNBERGER, ERICH;OELKRUG, HANS;GERLACH, PETER;SEGIETH, FRANZ