| 摘要 |
A photoelectric conversion detection cell includes a photodiode; a storage capacitor for storing a photo-induced charge induced in the photodiode; and a transfer transistor for transferring the photo-induced charge induced in the photodiode to the storage capacitor, the source of the transfer transistor being connected to the photodiode, the drain of the transfer transistor being connected to the storage capacitor; an inverting amplifier, the input of the inverting amplifier being connected to the photodiode, the output of the inverting amplifier being connected to the gate of the transfer transistor. Also, the photo-induced charge stored in the storage capacitor may be reset and an amplified output corresponding to the photo-induced charge stored in the storage capacitor may be generated by an amplifier. The photoelectric conversion detection cell is used as a pixel to form a low noise and high sensitivity solid state image pickup device. In a further embodiment, a current mirror is connected in parallel to the storage capacitor.
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