发明名称 |
Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor |
摘要 |
A surface of a first aluminum interconnection layer in a connection hole is exposed to a plasma of oxygen or fluorine-containing gas during the forming step of the connection hole. In order to remove the thin deterioration layer which forms as a result, sputter etching is effected by an argon ion. There are residual particles of the oxide and fluoride of aluminum on the surface of the first aluminum interconnection layer. A titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum layer through the through hole. A titanium compound layer is formed on the titanium layer. A second aluminum layer is formed on the titanium compound layer. A heat treatment is effected to decompose the residual particles and to form an intermetallic compound (TiAl3).
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申请公布号 |
US5488014(A) |
申请公布日期 |
1996.01.30 |
申请号 |
US19940213417 |
申请日期 |
1994.03.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HARADA, SHIGERU;ARIMA, JUNICHI;FUJIKI, NORIAKI |
分类号 |
H01L23/52;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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