发明名称 |
Oriented diamond film structures on non-diamond substrates |
摘要 |
The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting diamond film. The present invention also provides a method for making a semiconductor device comprising the steps of providing a layer of a transition metal silicide and forming a semiconducting diamond layer on the layer of transition metal silicide.
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申请公布号 |
US5488232(A) |
申请公布日期 |
1996.01.30 |
申请号 |
US19930128365 |
申请日期 |
1993.09.28 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
GLASS, JEFFREY T.;SIMENDINGER, DENISE T.;GOELLER, PETER T. |
分类号 |
H01L21/20;(IPC1-7):H01L29/161;H01L29/20;H01L29/22 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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