发明名称 |
Method for manufacturing self-aligned bipolar transistors using double diffusion |
摘要 |
Manufacturing a double polysilicon layer self-aligned type bipolar transistor. A polysilicon layer for emitter impurity diffusion is formed prior to the formation of a polysilicon layer for leading out a base. A first polysilicon layer containing impurities for base impurity diffusion is deposited over the entire surface of a semiconductor structure. After the first polysilicon layer is patterned into a predetermined shape, an intrinsic base layer is formed by thermally diffusing impurities from a base impurity diffusion source. Subsequently, a second polysilicon layer containing emitter impurities is formed over the base impurity diffusion source, and then patterning is performed such that the first and second polysilicon layers remain in a region narrower than the base impurity diffusion source. Thereafter, an emitter layer is formed by thermal diffusion.
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申请公布号 |
US5488002(A) |
申请公布日期 |
1996.01.30 |
申请号 |
US19940302199 |
申请日期 |
1994.09.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KIMURA, KOJI;TAKA, SHIN-ICHI |
分类号 |
H01L29/73;H01L21/331;H01L29/732;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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