发明名称 |
Semiconductor light-emitting device with compound semiconductor layer |
摘要 |
This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.
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申请公布号 |
US5488233(A) |
申请公布日期 |
1996.01.30 |
申请号 |
US19940208850 |
申请日期 |
1994.03.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ISHIKAWA, MASAYUKI;NISHIKAWA, YUKIE;SAITO, SHINJI;PARBROOK, PETER J.;ONOMURA, MASAAKI;NITTA, KOICHI;HATAKOSHI, GENICHI |
分类号 |
H01L33/00;H01L33/28;H01S5/20;H01S5/223;H01S5/30;H01S5/347;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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