| 摘要 |
A process for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices, the particularity whereof is that it comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, advantageously helium, in the active regions of the integrated device so that the ions form bubbles (71a-71d, 72a, 72b) in the active regions (3a, 3b, 2a). A further thermal treatment can be performed after the formation of bubbles of the noble gas in order to improve the structure of the bubbles and to make the noble gas evaporate, so as to leave cavities in the active regions. <MATH> |
