发明名称 |
Metal/semiconductor junction Schottky diode optical device using a distortion grown layer |
摘要 |
A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is formed on the GaAs mirror and AlAs mirror layers. A GaAs buffer layer is formed on the semiconductor layer to grow a Schottky metal layer serving as an electrode and a mirror. A multiple quantum well structure having an electro-optical absorption characteristic is positioned between the semiconductor layer and Schottky metal layer, for constructing a diode with the metal layer/multiple quantum well structure. At least a part of the mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between the metal layer and mirror layers. The substrate on which the diode is formed has an opposite side formed with an optical non-reflective layer.
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申请公布号 |
US5488231(A) |
申请公布日期 |
1996.01.30 |
申请号 |
US19940352628 |
申请日期 |
1994.12.09 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KWON, O-KYUN;CHOI, YOUNG-WAN;LEE, EL-HANG |
分类号 |
H01L29/47;G02F1/015;G02F3/00;G02F3/02;H01L29/12;H01L29/872;H01L31/0352;H01L31/108;(IPC1-7):H01L27/14;H01L31/00 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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