| 摘要 |
A method for forming contacts for establishing an electrical connection with contact locations on a semiconductor die is provided. The contacts are formed as raised members mounted on a compliant substrate. Each contact includes a rough textured surface having asperities adapted to penetrate the contact location on the die to a limited penetration depth. The height of the asperities is between about 1000 ANGSTROM to 10,000 ANGSTROM . The textured surface and asperities are formed by electroplating a rough metal layer on a raised metal contact or by etching a surface of a raised metal contact. In an illustrative embodiment the contacts comprise microbumps formed on a compliant polyimide substrate. For forming an interconnect suitable for establishing a temporary electrical connection with an unpackaged semiconductor die, the polyimide substrate is attached to a rigid substrate, such as silicon, having a coefficient of thermal expansion that matches that of a silicon die. The interconnect can then be used with a carrier for testing the unpackaged die.
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