| 摘要 |
PURPOSE:To reduce the deterioration in the characteristics of a thin film photoelectric converter by forming a thin silicide layer between a semiconductor and a back surface electrode, and preventing a metal component for forming a back surface electrode and a metal compound for forming the electrode of a light incident side from diffusing in the semiconductor even when the converter is used at high temperature. CONSTITUTION:An amorphous p-type layer, an i-type layer and an n-type layer are formed by a normal method on a transparent substrate formed with transparent electrodes, and a silicide layer is formed in the prescribed thickness by a sputtering method by a silicide target. Then, a back surface electrode is accumulated by a normal method to form a heat resistant thin film photoelectric converter. The converter has less decrease in the characteristics due to the heating as it is and preferable characteristics. When heat treated at 180 deg.C - film forming temperature for 0.5-4hr, the contacts of the silicide layer and the semiconductor, the silicide layer and the electrode are improved to reduce the series resistance of the boundary. |
