PREPARATION OF PHASE INVERSION MASK

摘要

PURPOSE: To provide a phase inversion mask of an ultra-precision semiconductor auxiliary pattern stressing type without utilizing an electron beam. CONSTITUTION: This process includes stages of successively depositing a first light shielding metallic layer 12 and a first phase inversion material layer 13 by evaporation on a transparent substrate 11, delineating light transmissive regions and parts including their auxiliary patterns and selectively removing the first light shielding metallic layer 12 and first phase inversion material layer 13 of the delineated parts; depositing a second phase inversion material layer 15 by evaporation over the entire surface and etching back the layer to form the side walls of the phase inversion materials ; flatly depositing an arbitrary material (for example, photosensitive film 17) having the higher selection ratio of etching than the first and second phase inversion material layers 13, 15 by evaporation and etching back the material in such a manner that the surfaces of the first and second phase inversion materials are sufficiently exposed; further, etching back the surface to the height of the first light shielding metallic layer 12 to form phase inversion layers in the auxiliary pattern regions; and depositing a second light shielding material layer by evaporation over the entire surface to form the walls of the second light shielding material on the side walls 16 of the phase inversion materials by etching back.