| 摘要 |
<p>PURPOSE:To prevent shorting between gates and sources and between gates and drains by the hillock of gate wirings of a liquid crystal display device for which positive stagger type TFTs are used and to improve yield. CONSTITUTION:The patterns of the gate wirings 19, 20 are formed smaller than gate insulating layers 18, by which the distances between the gate wirings 19, 20 and the source and drain wirings 14, 15, 16 are prolonged. The hillock does not, therefore, arrive at the source and drain wirings 14, 15, 16 and the purposes are attained even if the hillock is generated in the gate wiring Al. Such liquid crystal display device is produced by adjusting the side etch quantity in etching using the same photoresist and forming the patterns of the gate wirings 19, 20 smaller than the gate insulating layers 18.</p> |
