| 摘要 |
<p>PURPOSE:To provide a means for preventing deterioration in characteristics by forming resin films only on the drain bus lines, etching away the metallic films formed on pixel electrodes with these resin films as a mask and further, covering the side faces of the channel layers of thin-film transistors (TFTs) or the entire surface with a protective film. CONSTITUTION:The resin films 14 are electrodeposited on the drain bus lines in the state of maintaining the metallic layers, such as gate electrodes 121 facing the channel layers 101, light shielding films 2, etc., at the state to maintain the potential to turn of the TFTs. At this time, the gate electrodes 121 or the gate bus lines are coated with anodically oxidized films and the resin films 142 to prevent the gate electrodes 121, etc., from acting as counter electrodes at the time of electrodeposition of the resins. In addition, the protective film over the entire surface is formed by electrodeposition of a photosensitive resin and the photosensitive resin films of terminal parts are exposed and are removed by developing. A resist to prevent electrodeposition is formed at the terminal parts to prevent the electrodeposition of the resin in these parts.</p> |
