发明名称 |
Method of manufacturing a semiconductor component, in particular a buried ridge laser |
摘要 |
In the method, a doped semiconductor coating is to be deposited on a disturbed surface (S) of a semiconductor base (9) doped with a dopant having the same conductivity type as the coating. According to the invention, prior to depositing a main layer (28) of the coating (10), a superdoped layer (24) is deposited, which superdoped layer has a dopant concentration that is greater than twice the mean concentration of the coating. The invention applies in particular to manufacturing a semiconductor laser for an optical fiber telecommunications system.
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申请公布号 |
US5486489(A) |
申请公布日期 |
1996.01.23 |
申请号 |
US19940191165 |
申请日期 |
1994.02.03 |
申请人 |
ALCATEL N.V. |
发明人 |
GOLDSTEIN, LEON;BONNEVIE, DOMINIQUE |
分类号 |
G02B6/13;H01L21/20;H01L33/00;H01S5/00;H01S5/227;H01S5/30;(IPC1-7):H01L21/20 |
主分类号 |
G02B6/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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