| 摘要 |
<p>PURPOSE:To provide a pattern forming method to obtain excellent dimensional stability and reproducibility of a pattern without any constraint for time in the pattern forming process. CONSTITUTION:First, a ladder silicone-type SOG is applied to 100nm thickness on a sample 1 to form a resist film 2. Then the film is baked at 80 deg.C for five minutes on a hot plate. The resist film 2 in a specified region is irradiated with univalent Ga ions 3 under conditions of 100KeV acceleration energy and 1X10<13>/cm<2> dose amt. by using a focusing ion beam device. The ladder silicone SOG in the irradiated area with the ion beams dehydrates and condensates to become insoluble with a solvent such as butanol. Then the substrate 1 is dipped in a butanol soln. Thereby, only the resist film 2 in the irradiated area with the ion beams remains as a resist pattern 2a, while the resist film 2 in other area is dissolved in the butanol soln.</p> |
