| 摘要 |
PCT No. PCT/JP94/00006 Sec. 371 Date Sep. 2, 1994 Sec. 102(e) Date Sep. 2, 1994 PCT Filed Jan. 6, 1994 PCT Pub. No. WO94/16124 PCT Pub. Date Jul. 21, 1994.A method of and an apparatus for predicting density and distribution of crystal defects those would appear in a semiconductor wafer in the course during heat treatment thereof on the basis of respective densities and distributions of interstitial atoms and atom vacancies frozen, during crystal growth, into a semiconductor single crystal which is used as a raw material of said semiconductor wafer, in a section of said semiconductor single crystal corresponding to said semiconductor wafer, comprising: deriving said respective densities and distributions of interstitial atoms and atom vacancies from a first diffusion equation representing a change with time in concentration of interstitial atoms in the semiconductor single crystal in the course of growth from a melt as a function of a position in the crystal and a second diffusion equation representing a change with time in concentration of atom vacancies in said crystal as a function of a position in the crystal.
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