发明名称 MANUFACTURING METHOD OF VARISTOR
摘要 <p>PURPOSE:To avoid the decline in varistor voltage due to intruding water content by a method wherein a varistor element after baking step is brought into contact with a reaction accelerator of unreacted material to be heated. CONSTITUTION:A ceramic sheet 1a and an inner electrode 2 are laminated to be cut off, debinder processed and chamferred. Next, the whole body is coated with an inner layer 3a of an outer electrode 3 to be reduction-baked later coated with an outer layer 3b to be heated for reoxidation. Next, a varistor element 1 is buried in a reaction accelerator to be heated at 700-850 deg.C. Through these heat treatments, unreacted material remaining in the varistor element 1 reacts with SiO2 used as a reaction accelerator to be turned into a hardly ionizable material even if it contains residual water. Through these procedures, the decline in the varistor voltage due to intrudsion water content can be avoided.</p>
申请公布号 JPH0822907(A) 申请公布日期 1996.01.23
申请号 JP19940153502 申请日期 1994.07.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 JINNO RIHO;UENO IWAO;WAKAHATA YASUO
分类号 H01C7/10;(IPC1-7):H01C7/10 主分类号 H01C7/10
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