| 摘要 |
PURPOSE:To obtain a bonding pad electrode structure which has sufficiently large allowable current and is improved so as not to cause cracking to an interlayer insulating film by a mechanical stress at wire bonding. CONSTITUTION:Interlayer insulating films 2a and 2b are formed direct on a semiconductor substrate 1, and an uppermost wiring layer 4 is provided thereon. As no lower wiring layer is present under an uppermost wiring layer 4a which serves as a bonding pad, no cracks occur in the interlayer insulating films 2a and 2b at wire bonding. The uppermost wiring layer 4 is connected to a lower wiring layer, so that a current flowing into a bonding pad is dispersed into these wiring layers. |
