| 摘要 |
<p>PURPOSE:To prevent the breakage of the insulation of a gate insulating film by forming a wiring film and an electrode film out of Al base alloy containing one at least one or more kinds out of specified elements by specified quantities, and specifying the thickness of an anodic oxide film. CONSTITUTION:A base alloy film 1 consisting of Al base alloy containing at least one or more kinds of elements, out of Fe, Co, and rare earth elements, by 0.1-10at% is made, and an anodic oxide film 2, 200Angstrom or over in thickness is made, thus a wiring electrode film 3 consisting of them is made. If the content of alloy within wiring electrode is less than 0.1at.%, the improvement of anode oxidation property becomes insufficient, and an anodic oxide film excellent in high insulation breakdown strength ceases to be gotten, so it is preferably 1at% or over. But, if it is 10at% or over, the specific resistance is over 20muOMEGAcm after heat treatment, and the shortening of the delay time of a gate bus line ceases to be gotten, so it is preferably 5at% or under. If the thickness of the anodic oxide film is less than 200Angstrom , the insulation breakdown strength becomes insufficient, so it is preferably 500Angstrom or over. Accordingly,the short circuit and the insulation breakage of the gate insulating film can be prevented.</p> |
