| 摘要 |
<p>PURPOSE:To form on a different kind of carrier substrate a semiconductor element thin film that has an electrical property and fine structure equivalent or more to a single-crystal silicon semiconductor element. CONSTITUTION:A semiconductor device is formed by bonding a thin film 102 where a single crystal semiconductor element 101 is formed and a carrier substrate made of different kind of material with a bonding layer 103 in between. Thus, since a single crystal semiconductor element is formed and it is bonded with a carrier substrate thereafter, a high-temperature process can be adopted for element formation without being affected by the quality of carrier substrate.</p> |
