| 摘要 |
PURPOSE: To prevent deterioration in transistors or conductive line patterns, by forming an electrically deformable thin film layer on a first thin film layer, and performing heat treatment so that phase transition will be caused. CONSTITUTION: An electrically deformable thin film layer 120 is formed on a first thin film layer 115, and then heat treatment is performed so that phase transition will be caused. Subsequently, a second thin film layer 116 is formed on the thin film layer 120, and an elastic layer 121 and a thin film sacrificial layer 131 are formed thereon in this order. Then, an array of M×N empty slots is formed on the thin film sacrificial layer 131. A support layer 126 and an array of M×N conduits 125 are formed, and thus a multilayer structure is formed. Then an array of transistors 140 is form on the multilayer structure 200 to form a semi-complete actuated mirror structure 210. An active matrix 111 is deposited, and an isolation layer 130 is removed to complete the actuated mirror structure. |
