| 摘要 |
PURPOSE:To enable transfer of fine patterns by decreasing the variations in the thicknesses of phase, shift films near the end of a light shielding film, thereby obtaining a photomask for which light of shorter wavelengths is usable. CONSTITUTION:The film thickness ratio of the phase shift films 3 to the light shielding film 2 is increased in a phase shift photomask. More specifically, the film thickness ratio of the phase shift films 3 to the light shielding film 2 is increased by decreasing the thickness of the light shielding film 2 or increasing the thickness of the phase shift films 3. Since film thickness ratio of the phase shift films 3 to the light shielding film 2 is increased, the variations of the thickness of the phase shift films 3 near the ends of the light shielding film are decreased. As a result, the photomask for which the light of the shorter wavelengths is usable is obtd. and, therefore, the transfer of the finer patterns is possible. |
