| 摘要 |
PURPOSE:To improve the light emitting efficiency and to shorten its wavelength. CONSTITUTION:An Al0.1Ga0.9P light emitting layer so doped with nitrogen as to selectively form an isoelectronic level and an Al0.7Ga0.3P barrier layer are laminated by fifty pairs to provide an active layer 13 of a superlattice structure of a staggered type (type II) on an n-type Al0.7Ga0.3P first clad layer 12, and further a p-type Al0.1Ga0.9P second clad layer 14 is provided thereon to confine electrons of a conduction band. The layer 13 is so controlled in the composition of the well layer and the barrier layer and the film thickness of the barrier layer to form a light emitting layer and a barrier layer as to resonate the quantum level of the barrier layer at the isoelectronic level of the well layer as the light emitting layer. Thus, the carrier injected in the band is stored at the quantum level of the carrier layer, and the quantum level is resonated with the isoelectronic level of the well layer, and hence the carrier injected in the barrier layer is transited at the isoelectronic level of the well layer to efficiently emit a light. |
