| 摘要 |
PURPOSE:To lower the operating voltage and increase the number of times of rewriting storage information, by applying the gate electrode of a Schottky gate field effect transistor to a first electrode, which is applied to a storage region of memory information charges. CONSTITUTION:The gate electrode of a Schottky gate field-effect transistor formed on a GaAs semiconductor substrate 1 is applied to a first gate electrode 3. An insulating film 4 between gate electrodes is formed on the first gate electrode 3. A second gate electrode 5 is formed on the first gate electrode 3, via the insulating film 4. The first gate electrode 3 serves as the storage part of memory information charges, and the second gate electrode 5 acts as the electrode for controlling the writing and erasing of the memory information charges. The information charges of the first gate electrode 3 are written and erased via a Schottky barrier between the semiconductor substrate 1 and the first gate electrode 3. Thereby the number of times of rewriting the information charges can be increased. |
