| 摘要 |
<p>PURPOSE:To make it possible to form conjugated system olygomer uniformly at the same time on a large substrate and to modulate a drain current largely with a voltage which is applied on a gate by using the conjugated system origomer whose ionization potential is specified in a semiconductor layer. CONSTITUTION:As the physical value indicating the degree of easy slip-out of electrons from a semiconductor, ionization potential is provided. A high ionization potential means that much energy is required when one electrons goes out of the material. Therefore, when the ionization potential is 4.8eV or more, it is considered that charge moving reaction with oxygen becomes hard to occur, the concentration of holes is decreased and the electrical conductivity becomes small. Thus, the field effect transistor having the large ON/OFF ratio is obtained by using comjugated system olygomer having the ionization potential of 4.8eV or more in a semiconductor layer. Furthermore, the ionization potential is defined as the value, which is measured by using a photoelectric spectroscope in the atmosphere.</p> |
