| 摘要 |
<p>PURPOSE:To provide a production method of a thin film transistor panel by which a TFT panel is produced with high accuracy in a simple process. CONSTITUTION:After a thin film transistor array is formed on a transparent substrate 11, a transparent conductive film 37 to form a pixel electrode 15 and a metallic layer to form a drain line 19 are successively formed. The metallic layer is patterned into the pixel electrode 15 and the drain line 19, and the metallic layer remaining is used as a mask for patterning of the transparent conductive film 37. As for the metallic layer remaining, the layer on the surface of the drain line 19 is anodically oxidized. The metallic layer 45 on the pixel electrode 15 is removed by etching while the drain line 19 is protected by the anodically oxidized film 47.</p> |
