| 摘要 |
<p>PURPOSE:To prevent the increase in the temp. of a reflection type photomask substrate having a reflection layer pattern on a substrate and to improve the accuracy of position of the exposed pattern by constituting the substrate of silicon carbide. CONSTITUTION:The substrate 1 of the reflection photomask having a reflection layer pattern 21 on the substrate consists of silicon carbide. By producing the supporting substrate 1 of silicon carbide to support the reflection pattern 21, the thermal conductivity is improved. Therefore, when short wavelength light is used for exposure (for example, i-line or an excimer laser such as KrF and ArF as the exposure light having shorter wavelength than g-line), and even when the light is absorbed to increase the substrate temp. (namely, the substrate is heated), the heat is rapidly conducted to escape outside of the member of the reflection type photomask and the substrate temp. is decreased. As a result, the warpage of the substrate and reduction of the accuracy of the position of the exposed pattern can be prevented.</p> |
