| 摘要 |
PURPOSE:To surely form a screen shape structure with excellent controllability when a substrate is not flat, by etching a third layer, and leaving a part of the third layer, on the outer side surface of a first layer, just under the protrud ing part of a second layer. CONSTITUTION:On a substrate 1, a first layer, e.g, an SiO2 layer 22, is formed, and thereon a second layer, e.g. a nitride layer 31, is laminated. The second layer 31 and the first layer 22 are worked into almost the same patterns. After the working, the second layer 31 is used as a mask, and the outer side surface of the first layer 22 is etched. The second layer 31 is made to protrude on the region eliminated by the etching. A third layer, e.g. a polysilicon layer 23, is stuck, from the second layer 31 containing the protruding part and a first layer 22 to the substrate 1. By etching the third layer 23, a part of the third layer 23 is left on the outer side surface of the first layer 22, just below the protruding part of the second layer 31. Thereby a screen type structure having a desired height and thickness can be formed. |
