| 摘要 |
<p>PURPOSE:To prevent light from entering the channel region of a semiconductor layer from the side of a board, using silicon dioxide having favorable properties as a gate insulating film. CONSTITUTION:A polycrystalline silicon layer 108, a tungsten disilicide layer 107, and a polycrystalline silicon layer 109 are made on a quartz substrate 10 to serve as a gate electrode 102, and a silicon dioxide layer is made by thermally oxidizing the surface of the gate electrode 10 to form a gate insulating film 103, and then a polycrystalline silicon layer 104 is provided thereon, and necessary doping is performed to form source and drain regions and a channel region.</p> |
