MANUFACTURE OF FILM TRANSISTOR, AND FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY

摘要

PURPOSE:To provide the manufacture of a high-quality TFT having favorable property. CONSTITUTION:In the manufacture of a film transistor, which grows and stacks the gate insulating layer 3 and the semiconductor layer 4 of a film transistor by plasma CVD method, when growing and stacking the semiconductor layer on the gate insulating layer, the interval between discharge electrodes is changed, with the plasma discharge maintained, after growing the gate insulating layer, and then the semiconductor layer is grown.