OXYGEN ELIMINATION METHOD, POLLUTANT ELIMINATION METHOD, AND METHOD AND DEVICE FOR GROWING COMPOUND SEMICONDUCTOR DEVICE USING THEM

摘要

PURPOSE:To provide a method for efficiently eliminating a pollutant on a semiconductor, especially oxide film. CONSTITUTION:When eliminating oxide film, hydrogen plasma and As molecular beams are applied, thus achieving an oxide elimination effect exceeding the combination of the oxide film elimination effect of hydrogen plasma and that of As molecular beams add eliminating the oxide film at a low temperature.