SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURE

摘要

PURPOSE:To prevent deterioration of performance of each device when different devices are mixedly mounted on a chip. CONSTITUTION:The manufacturing method consists of a process wherein a high concentration buried layer 6 in a region 2, where a first device is formed, and a high concentration buried layer 9 in a region 3, where a second device is formed, are formed on a silicon substrate 1 by implanting the same ion species with different acceleration voltages, and a process wherein an epitaxial growth layer 16 is formed on the high concentration buried layers 6, 9.