发明名称 MONTE CARLO SIMULATION FOR SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To determine occurrence of particle-to-particle scattering and scattering targets accurately and efficiently, without causing an increase in the number of particles and CPU time. CONSTITUTION:First, what energy of a particle may cause scattering is determined. In the determination, a simplified scattering probability is used which is not lower than an original electron-to-electron scattering probability and is proportionate to the number of particles belonging to an energy level. Subsequently, what momentum vector of an angular component of a particle may cause scattering is determined. In the determination, a simplified scattering probability is used which is not lower than the original electron-to-electron scattering probability and is proportionate to the number of particles belonging to an energy level and an angular component level. In each case, the number of particles can be found from a status table of particles integrated during a preceding time increment DELTAt. When scattering targets are specified, occurrence of particle-to-particle scattering is finally determined using the original scattering probability. The scattering targets are selected without evaluating the scattering probability of each pair of particles capable being scattered.</p>
申请公布号 JPH0817885(A) 申请公布日期 1996.01.19
申请号 JP19940144298 申请日期 1994.06.27
申请人 NEC CORP 发明人 IIZUKA TAKAHIRO
分类号 H01L21/66;G06F17/00;G06F19/00;H01L21/00;H01L29/00;(IPC1-7):H01L21/66 主分类号 H01L21/66
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