| 摘要 |
PURPOSE:To provide a registration-accuracy measuring pattern by which registration accuracy in a lithographic operation can be measured precisely. CONSTITUTION:A registration-accuracy measuring pattern 1 is composed of a substratum pattern 11, for measurement of a plane rectangular shape, which is formed on a substrate 6 and of an upper-layer pattern 12, for measurement, which is formed of a resist film 12a on the substrate 6 on which the subtratun pattern 11 for measurement has been formed. The upper-layer pattern 12 for measurement is formed in such a way that a pattern having a prescribed pattern width W is arranged on a plane rectangular ring, and one sidewall of the substratum pattern 11 for measurement and one sidewall of the upper-layer pattern 12 for measurement are formed in a state that they become parallel. Thereby, the volume of a resist constituting the upper-layer pattern 12 for measurement is suppressed, and the thermal deformation of the pattern is prevented. In addition, when the upper-layer pattern 12 for measurement is formed of a negative resist, the irradiation width of exposure light is set to a prescribed width, and the diffraction angle of the exposure light is set to a prescribed value or higher so as to restrain high-order diffracted light from creeping into an exposure part. |
