| 摘要 |
PURPOSE: To provide the manufacturing process of a luminescence silicon material having a photoluminescence characteristic and electroluminescence characteristic at a room temperature. CONSTITUTION: The silicon ion is implanted to a silicon dioxide (SiO2 ) substrate, and the substrate after ion implantation is annealed for a specific time at a certain annealing temperature, to form the nanocrystal of silicon dispersed to the silicon dioxide substrate. On this occasion, the ion implantation is performed with at least 100 keV of energy, under a condition that a dosage of the implanted ion is not less than 1×10<17> /cm<2> , and not more then the surface corrosion dosage. The luminescence material prepared by this process, is provided with, for example, the photoluminescence characteristics of the visible light, by the irradiation of an ultraviolet light to the luminescent material, and can be incorporated into an electroluminescence device. The average particle size of the nanocystal of silicon dispersed in the silicon dioxide substrate, is about 30Å.
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