| 摘要 |
PURPOSE:To provide a transistor structure which can control the change of the quantity of currents capable of being let flow when the drive voltage has changed, and the change of the current driving capacity, and its manufacture. CONSTITUTION:The change of the quantity of currents capable of being let flow and the change of the current driving capacity is suppressed by doping n-type impurity diffusion layers 13b (11) made on both sides of the gate electrode 5 of a pch MOS transistor with p-type impurities by oblique ion implantation method, so as to offset the n-type impurities in the impurity region shown at least by A overlapping the gate electrode 5, thereby suppressing the rise of the threshold voltage of a P-channel type of MIS transistor by n-type impurity diffusion layer.
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