发明名称 |
X-RAY LITHOGRAPHIC METHOD FOR IRRADIATION OF OBJECT AND FOR FORMATION OF PATTERN ON IT |
摘要 |
<p>PURPOSE: To provide a method for reducing the pressure change of a membrane material due to the application of X rays. CONSTITUTION: In an X-ray lithography method for forming a pattern after applying X rays to an object, an X-ray mask 10 with a membrane 18 is used. The membrane 18 has an open membrane surface 26 and X rays 16 are applied to an object 14 through the open membrane surface 26. During the X rays irradiation, the open membrane surface 26 is exposed to the X rays 16 substantially uniformly and only the in the membrane 16 induced by a stress is reduced.</p> |
申请公布号 |
JPH0817727(A) |
申请公布日期 |
1996.01.19 |
申请号 |
JP19950176861 |
申请日期 |
1995.06.21 |
申请人 |
MOTOROLA INC |
发明人 |
DAGURASU JIEI RESUNITSUKU;UIRIAMU EE JIYONSON;HEKUTAA TEII EICHI CHIEN |
分类号 |
H01L21/027;G03F1/22;G03F7/20;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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