| 摘要 |
This invention relates to a photodetector including a package having a window disposed in a light incident part, and a light detecting element installed in the package. The light detecting element comprises a first region (23) formed of second conduction-type semiconductor and embedded in a first conduction-type semiconductor crystal layer (22); a second region (24) formed of second conduction-type semiconductor and embedded so as to be spaced from and surround the first region (23); and a conductor layer (31) provided both on at least one part of top surface of the first conduction-type semiconductor layer (22) and on at least one part of top surface of the second region (24). The first region (23) is surrounded by the second conduction-type second region (24). On the surface of the semiconductor crystal layer (22), an electrode (25) is formed on the first region (23), and a reflection preventing layer (26) is formed on that part of the first region (23) inside the electrode (25), and a device protecting film (27) is formed on that part of the first region (23) outside the electrode (25). On the semiconductor crystal layer (22), a metal film (31) is formed in contact both with the semiconductor crystal layer (22) and with the second region (24). This structure enables the second region (24) to capture unnecessary charges and further to recombine and extinguish them. <IMAGE>
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