发明名称 Semiconductor device with a bump and method of manufacturing the same
摘要 PURPOSE: To manufacture a bump applicable to an electrode of large area in a simple process, by providing, on an electrode part, a protruding body which is made of a substance having a small elastic modulus and a composite bump which is made by covering the protruding body with a metal film having a large elastic modulus and a proximate elastic coefficient. CONSTITUTION: In an oxide film on a silicon substrate 2 having a base diffusion region 3 and an emitter diffusion region 4 formed therein, a base aperture 5 and an emitter aperture 6 are opened. An Al-Si alloy is deposited thereon and photo-etching is carried out to form an Al electrode 7. Then, on the surface of the Al electrode 7 for forming a bump thereon, polyimide resin is accurately ejected and dropped from a nozzle and heat treatment is carried out to form a partly spherical protruding body 18. Subsequently, another Al-Si alloy is deposited and a second Al electrode 17 is photo-etched to form a composite bump 20. Finally, a nitride film 11 is deposited and patterned to protect a flat part of the second Al electrode 17.
申请公布号 SE9600180(D0) 申请公布日期 1996.01.18
申请号 SE19960000180 申请日期 1996.01.18
申请人 FUJI ELECTRIC CO LTD 发明人 AKIRA *AMANO
分类号 H01L21/28;H01L;H01L21/283;H01L21/321;H01L21/52;H01L21/60;H01L23/485;H01L29/43;H01L29/74 主分类号 H01L21/28
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