Dünnfilmtransistor und Verfahren zu dessen Herstellung

摘要

The thin film transistor (TFT) comprises a patterned gate electrode (21) formed on a substrate; a channel layer (24) formed around the gate electrode with a gate insulating layer (22) interposed therebetween; an interlayer insulating layer (25) formed on the channel layer; and source and drain electrodes (26A, 26B) formed on both side walls of the channel layer and on both side portions of the interlayer insulating layer, and isolated from each other. Each of the channel and source/drain layers is composed of polysilicon with impurity ions. In the TFT, because each of the source and drain electrodes is formed relatively thicker than the channel layer, they are significantly reduced in resistance. In an alternative arrangement the gate (56) is formed above the channel layer (54) (Figure 5). <IMAGE>